onsemi 2SK4099LS

2SK4099LS onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
940mOhm @ 4A, 10V
edacadModel:
2SK4099LS Models
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2797081
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FI(LS)
Current - Continuous Drain (Id) @ 25°C:
6.9A (Tc)
Power Dissipation (Max):
2W (Ta), 35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SK4099
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SK4099LS. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 940mohm @ 4a, 10v. The maximum gate charge and given voltages include 29 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 750 pf @ 30 v. The product is available in through hole configuration. to-220fi(ls) is the supplier device package value. The continuous current drain at 25°C is 6.9a (tc). The product carries maximum power dissipation 2w (ta), 35w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk4099, a base product number of the product. The product is designated with the ear99 code number.

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