onsemi 2SK3827

2SK3827 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
34mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.75W (Ta), 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4200 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SK3827
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SK3827. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 34mohm @ 20a, 10v. The maximum gate charge and given voltages include 79 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.75w (ta), 60w (tc). The product's input capacitance at maximum includes 4200 pf @ 20 v. The product is available in through hole configuration. to-220 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk3827, a base product number of the product. The product is designated with the ear99 code number.

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2SK3827(Datasheets)
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onsemi RoHS(Environmental Information)

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