onsemi 2SJ652

2SJ652 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
38mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
REACH Status:
REACH Unaffected
edacadModel:
2SJ652 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/2748038
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
4360 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220ML
Packaging:
Bag
Current - Continuous Drain (Id) @ 25°C:
28A (Ta)
Power Dissipation (Max):
2W (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2SJ652
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SJ652. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 38mohm @ 14a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4360 pf @ 20 v. The product is available in through hole configuration. to-220ml is the supplier device package value. In addition, bag is the available packaging type of the product. The continuous current drain at 25°C is 28a (ta). The product carries maximum power dissipation 2w (ta), 30w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sj652, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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