Maximum Continuous Drain Current:
140 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
136 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
4.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
136 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7400 pF @ 20 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 140A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS5
ECCN:
EAR99
