N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC onsemi FDS6690AS

FDS6690AS N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
910 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS6690
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 10 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS6690AS. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product powertrench, syncfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 12mohm @ 10a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta). The product's input capacitance at maximum includes 910 pf @ 15 v. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds6690, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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Trans MOSFET N-CH 30V 10A 8-Pin SOIC(Technical Reference)
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onsemi RoHS(Environmental Information)
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FDDx/FDMx/FDSx/NDSx/PFCx 29/Jun/2022(PCN Assembly/Origin)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 24/Dec/2021(PCN Obsolescence/ EOL)
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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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Mult Dev EOL 14/Jan/2022(PCN Obsolescence/ EOL)
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FDS6690AS(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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