Maximum Continuous Drain Current:
350 mA
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-92L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
N
Length:
4.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.5 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
8mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.3 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
Rds On (Max) @ Id, Vgs:
5.3Ohm @ 175mA, 10V
title:
FQNL2N50BTA
Vgs(th) (Max) @ Id:
3.7V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
350mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQNL2
ECCN:
EAR99
