Maximum Continuous Drain Current:
106 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
60 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 22.5A, 10V
edacadModel:
FDMC2514SDC Models
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2602559
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2705 pF @ 13 V
Mounting Type:
Surface Mount
Series:
Dual Cool™, PowerTrench®, SyncFET™
Supplier Device Package:
Dual Cool ™ 33
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC25
ECCN:
EAR99
