Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
106 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
160 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1.2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Maximum Drain Source Resistance:
4 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 35A, 10V
title:
FDP8870
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5200 pF @ 15 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
132 nC @ 10 V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 156A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP88
ECCN:
EAR99
