N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK ON Semiconductor NTD24N06T4G

NTD24N06T4G N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK ON Semiconductor
onsemi

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
42 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
42mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.36W (Ta), 62.5W (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
24A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD24
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 24 A 60 V 3-Pin DPAK ON Semiconductor manufactured by onsemi. The manufacturer part number is NTD24N06T4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 24 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 42 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 24 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 42mohm @ 10a, 10v. The maximum gate charge and given voltages include 48 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.36w (ta), 62.5w (tj). The product's input capacitance at maximum includes 1200 pf @ 25 v. dpak is the supplier device package value. The continuous current drain at 25°C is 24a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntd24, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Expansion 24/Jul/2015(PCN Assembly/Origin)
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NTD24N06(Datasheets)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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