Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
88 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.5V
Height:
4.83mm
Width:
9.65mm
Length:
10.29mm
Maximum Drain Source Resistance:
8 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
116 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
88 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTB5405NT4G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/1792933
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4000 pF @ 32 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTB5405
ECCN:
EAR99
