Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.5 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
1.5mm
Width:
2.5mm
Length:
4.5mm
Maximum Drain Source Resistance:
2.4 Ω
Package Type:
SOT-89
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.2 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-243AA
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 600mA, 10V
edacadModel:
PCP1402-TD-H Models
Gate Charge (Qg) (Max) @ Vgs:
4.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5022543
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
210 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-89/PCP-2
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PCP1402
ECCN:
EAR99
