Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
MCPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.8 nC @ 4 V
Channel Type:
P
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.83mm
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
430 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
215mOhm @ 1A, 4V
edacadModel:
MCH3333A-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
2.8 nC @ 4 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
edacadModelUrl:
/en/models/5761742
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
900mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
240 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-70FL/MCPH3
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MCH3333
ECCN:
EAR99
