Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
35 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
CPH
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
2.9mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
73 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
37mOhm @ 3A, 10V
edacadModel:
CPH6443-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/5845542
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
35 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CPH
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CPH6443
ECCN:
EAR99
