Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
CPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.6 nC @ 4.5 V
Channel Type:
P
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.9mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
215 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
70mOhm @ 1.5A, 4.5V
edacadModel:
CPH3348-TL-W Models
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5698149
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
405 pF @ 6 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-CPH
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CPH3348
ECCN:
EAR99
