Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
625 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.78mm
Width:
0.98mm
Length:
1.7mm
Maximum Drain Source Resistance:
1.8 Ω
Package Type:
SOT-523 (SC-89)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
830 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-89, SOT-490
Rds On (Max) @ Id, Vgs:
500mOhm @ 830mA, 4.5V
title:
FDY102PZ
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDY102PZ Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/1955349
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
625mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
135 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
3.1 nC @ 4.5 V
Supplier Device Package:
SC-89-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
830mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDY102
ECCN:
EAR99
