N-Channel MOSFET, 48 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4925NT1G

NTMFS4925NT1G N-Channel MOSFET, 48 A, 30 V, 8-Pin SO-8FL onsemi
onsemi

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
10.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
23.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
8.5 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
48 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
5.6mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21.5 nC @ 10 V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
920mW (Ta), 23.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1264 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9.7A (Ta), 48A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS4925
ECCN:
EAR99
RoHs Compliant
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This is N-Channel MOSFET 48 A 30 V 8-Pin SO-8FL manufactured by onsemi. The manufacturer part number is NTMFS4925NT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 10.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 23.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.2v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 8.5 mω maximum drain source resistance. The package is a sort of so-8fl. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 48 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 5.6mohm @ 30a, 10v. The maximum gate charge and given voltages include 21.5 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 920mw (ta), 23.2w (tc). The product's input capacitance at maximum includes 1264 pf @ 15 v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9.7a (ta), 48a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmfs4925, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev EOL 01/Oct/2021(PCN Obsolescence/ EOL)
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NTMFS4925N(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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