Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
5.5mm
Width:
15.5mm
Length:
43.8mm
Maximum Drain Source Resistance:
10.5 Ω
Package Type:
TO-3PF
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
3W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
