Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
19 nC @ 5 V, 35 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Width:
3.9mm
Length:
4.9mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10.8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
19.9 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
13mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
2670 pF @ 20 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS41
ECCN:
EAR99
