Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
1.5mm
Width:
7.3mm
Length:
6.5mm
Maximum Drain Source Resistance:
41 mΩ
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
ATPAK (2 Leads+Tab)
Rds On (Max) @ Id, Vgs:
25mOhm @ 15A, 10V
edacadModel:
ATP106-TL-H Models
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2165409
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1380 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ATPAK
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ATP106
ECCN:
EAR99
