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This is manufactured by Vishay Siliconix. The manufacturer part number is SQJ152EP-T1_GE3. It has a maximum Rds On and voltage of 5.1mohm @ 15a, 10v. It features n-channel 40v 114a (tc) 136w (tc) surface mount powerpak® so-8. The product's input capacitance at maximum includes 1450pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product trenchfet® gen iv, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 27nc @ 10v. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in powerpak® so-8. The product carries maximum power dissipation 136w (tc). The product has a 40v drain to source voltage. The continuous current drain at 25°C is 114a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.
For more information please check the datasheets.
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