Vishay Siliconix SISH892BDN-T1-GE3

Enrgtech Part No: ET20966754
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Manufacturer Part No:
SISH892BDN-T1-GE3
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Manufacturer: Vishay Siliconix

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs:

30.4mOhm @ 10A, 10V

title:

SISH892BDN-T1-GE3

Vgs(th) (Max) @ Id:

2.4V @ 250µA

REACH Status:

REACH Affected

edacadModel:

SISH892BDN-T1-GE3 Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SISH892BDN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 30.4mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.4w (ta), 29w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 1110 pf @ 50 v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. The maximum gate charge and given voltages include 26.5 nc @ 10 v. powerpak® so-8dc is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 6.8a (ta), 20a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)

SISH892BDN(Datasheets)

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