ON Semiconductor NTMT110N65S3HF

ON Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
110mOhm @ 15A, 10V
Detailed Description:
N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount 4-PQFN (8x8)
Input Capacitance (Ciss) (Max) @ Vds:
2635pF @ 400V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5V @ 740µA
Series:
SuperFET® III, FRFET®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 10V
Supplier Device Package:
4-PQFN (8x8)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
4-PowerTSFN
Power Dissipation (Max):
240W (Tc)
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMT110N65S3HF. It has a maximum Rds On and voltage of 110mohm @ 15a, 10v. It features n-channel 650v 30a (tc) 240w (tc) surface mount 4-pqfn (8x8). The product's input capacitance at maximum includes 2635pf @ 400v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 740µa. The product superfet® iii, frfet®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 62nc @ 10v. 4-pqfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 4-powertsfn. The product carries maximum power dissipation 240w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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NTMT110N65S3HF(Datasheets)

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