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This is manufactured by Vishay Siliconix. The manufacturer part number is SISH536DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. It has a maximum Rds On and voltage of 3.25mohm @ 10a, 10v. The maximum gate charge and given voltages include 25 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +16v, -12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.57w (ta), 26.5w (tc). The product's input capacitance at maximum includes 1150 pf @ 15 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen v, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. The continuous current drain at 25°C is 24.7a (ta), 67.4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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