Vishay Siliconix SI3129DV-T1-GE3

SI3129DV-T1-GE3 Vishay Siliconix
SI3129DV-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
82.7mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
805 pF @ 40 V
standardLeadTime:
62 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta), 5.4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI3129DV-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 82.7mohm @ 3.8a, 10v. The maximum gate charge and given voltages include 18 nc @ 10 v. The product is rohs3 compliant. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta), 4.2w (tc). The product's input capacitance at maximum includes 805 pf @ 40 v. It has a long 62 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. The continuous current drain at 25°C is 3.8a (ta), 5.4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

pdf icon
New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
pdf icon
SI3129DV(Datasheets)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SI3129DV-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET20919967. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SI3129DV-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI3129DV-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI3129DV-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20919967 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20919967.
Yes. We ship SI3129DV-T1-GE3 Internationally to many countries around the world.