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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XPW4R10ANB,L1XHQ. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 4.1mohm @ 35a, 10v. The maximum gate charge and given voltages include 75 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 170w (tc). The product's input capacitance at maximum includes 4970 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product is automotive, a grade of class. 8-dsop advance is the supplier device package value. The continuous current drain at 25°C is 70a. This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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