Renesas Electronics America Inc UPA2813T1L-E1-AT

UPA2813T1L-E1-AT Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 27A, 10V
FET Type:
P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3130 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HVSON (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Power Dissipation (Max):
1.5W (Ta), 52W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is UPA2813T1L-E1-AT. It is assigned with possible HTSUS value of 8541.29.0095. Moreover, the product comes in 8-powervdfn. The maximum gate charge and given voltages include 80 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 6.2mohm @ 27a, 10v. It carries FET type p-channel. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3130 pf @ 10 v. The product is available in surface mount configuration. 8-hvson (3.3x3.3) is the supplier device package value. The continuous current drain at 25°C is 27a (tc). The product carries maximum power dissipation 1.5w (ta), 52w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 19/Jun/2020(PCN Obsolescence/ EOL)
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Label Change-All Devices 01/Dec/2022(PCN Packaging)

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