Renesas Electronics America Inc RQJ0305EQDQS#H1

Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-243AA
Gate Charge (Qg) (Max) @ Vgs:
3 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 1.7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+8V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
UPAK
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is RQJ0305EQDQS#H1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-243aa. The maximum gate charge and given voltages include 3 nc @ 4.5 v. It has a maximum Rds On and voltage of 140mohm @ 1.7a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +8v, -12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.5w (ta). The product's input capacitance at maximum includes 330 pf @ 10 v. The product is available in surface mount configuration. upak is the supplier device package value. The continuous current drain at 25°C is 3.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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RQJ0305EQDQS(Datasheets)
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Label Change-All Devices 01/Dec/2022(PCN Packaging)

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