Renesas Electronics America Inc NP55N055SDG-E1-AY

NP55N055SDG-E1-AY Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 28A, 10V
Gate Charge (Qg) (Max) @ Vgs:
96 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.2W (Ta), 77W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4800 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (MP-3ZK)
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Renesas Electronics America Inc. The manufacturer part number is NP55N055SDG-E1-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 9.5mohm @ 28a, 10v. The maximum gate charge and given voltages include 96 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.2w (ta), 77w (tc). The product's input capacitance at maximum includes 4800 pf @ 25 v. The product is available in surface mount configuration. to-252 (mp-3zk) is the supplier device package value. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

pdf icon
Multiple Devices 28/Aug/2013(PCN Obsolescence/ EOL)
pdf icon
Wafer Fabrication Site Change 10/Oct/2013(PCN Assembly/Origin)
pdf icon
Label Change-All Devices 01/Dec/2022(PCN Packaging)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search NP55N055SDG-E1-AY on website for other similar products.
We accept all major payment methods for all products including ET20673935. Please check your shopping cart at the time of order.
You can order Renesas Electronics America Inc brand products with NP55N055SDG-E1-AY directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Renesas Electronics America Inc NP55N055SDG-E1-AY. You can also check on our website or by contacting our customer support team for further order details on Renesas Electronics America Inc NP55N055SDG-E1-AY.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20673935 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Renesas Electronics America Inc" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20673935.
Yes. We ship NP55N055SDG-E1-AY Internationally to many countries around the world.