Renesas Electronics America Inc NP109N04PUG-E1-AY

NP109N04PUG-E1-AY Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.8W (Ta), 220W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
15750 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263-3
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NP109N04
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is NP109N04PUG-E1-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.3mohm @ 55a, 10v. The maximum gate charge and given voltages include 270 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.8w (ta), 220w (tc). The product's input capacitance at maximum includes 15750 pf @ 25 v. The product is available in surface mount configuration. to-263-3 is the supplier device package value. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to np109n04, a base product number of the product. The product is designated with the ear99 code number.

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Label Change-All Devices 01/Dec/2022(PCN Packaging)

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