Renesas Electronics America Inc HAT2165HWS-E

HAT2165HWS-E Renesas Electronics America Inc
Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 27.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5180 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK
Current - Continuous Drain (Id) @ 25°C:
55A (Ta)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is HAT2165HWS-E. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 33 nc @ 4.5 v. It has a maximum Rds On and voltage of 3.3mohm @ 27.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5180 pf @ 10 v. The product is available in surface mount configuration. lfpak is the supplier device package value. The continuous current drain at 25°C is 55a (ta). The product carries maximum power dissipation 30w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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Label Change-All Devices 01/Dec/2022(PCN Packaging)

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