Renesas Electronics America Inc HAT1069C-EL-E

Renesas Electronics America Inc

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
900mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1380 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CMFPAK
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas Electronics America Inc. The manufacturer part number is HAT1069C-EL-E. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 6-smd, flat leads. The maximum gate charge and given voltages include 16 nc @ 4.5 v. It has a maximum Rds On and voltage of 52mohm @ 1.5a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 12 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 900mw (ta). The product's input capacitance at maximum includes 1380 pf @ 10 v. The product is available in surface mount configuration. 6-cmfpak is the supplier device package value. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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HAT1069C(Datasheets)
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Label Change-All Devices 01/Dec/2022(PCN Packaging)

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FAQs

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