Rohm Semiconductor RX3G07CGNC16

RX3G07CGNC16 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 70A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2410 pF @ 20 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RX3G07
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RX3G07CGNC16. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 500µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 4.7mohm @ 70a, 10v. The maximum gate charge and given voltages include 32 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tube package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 78w (tc). The product's input capacitance at maximum includes 2410 pf @ 20 v. It has a long 16 weeks standard lead time. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rx3g07, a base product number of the product. The product is designated with the ear99 code number.

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