Vishay Siliconix IRF630PBF-BE3

IRF630PBF-BE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.4A, 10V
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF630
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is IRF630PBF-BE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 43 nc @ 10 v. It has a maximum Rds On and voltage of 400mohm @ 5.4a, 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 74w (tc). The product's input capacitance at maximum includes 800 pf @ 25 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irf630, a base product number of the product. The product is designated with the ear99 code number.

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IRF630(Datasheets)

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FAQs

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