Infineon Technologies IMBG120R090M1HXTMA1

IMBG120R090M1HXTMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.7V @ 3.7mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
125mOhm @ 8.5A, 18V
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IMBG120R090M1HXTMA1 Models
FET Type:
N-Channel
edacadModelUrl:
/en/models/13530809
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
763 pF @ 800 V
standardLeadTime:
28 Weeks
Mounting Type:
Surface Mount
Series:
CoolSiC™
Supplier Device Package:
PG-TO263-7-12
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMBG120
ECCN:
EAR99
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IMBG120R090M1HXTMA1. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.7v @ 3.7ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 125mohm @ 8.5a, 18v. The maximum gate charge and given voltages include 23 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +18v, -15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 136w (tc). The product's input capacitance at maximum includes 763 pf @ 800 v. It has a long 28 weeks standard lead time. The product is available in surface mount configuration. The product coolsic™, is a highly preferred choice for users. pg-to263-7-12 is the supplier device package value. The continuous current drain at 25°C is 26a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to imbg120, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.


FAQs

Yes. You can also search IMBG120R090M1HXTMA1 on website for other similar products.
We accept all major payment methods for all products including ET20612097. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IMBG120R090M1HXTMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IMBG120R090M1HXTMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IMBG120R090M1HXTMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20612097 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20612097.
Yes. We ship IMBG120R090M1HXTMA1 Internationally to many countries around the world.