Toshiba Semiconductor and Storage XPN12006NC,L1XHQ

XPN12006NC-L1XHQ Toshiba Semiconductor and Storage XPN12006NC,L1XHQ
Toshiba Semiconductor and Storage

Product Information

HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 200µA
Operating Temperature:
-55°C ~ 175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
edacadModel:
XPN12006NC,L1XHQ Models
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/13213038
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 10 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-TSON Advance-WF (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
20A
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPN12006
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XPN12006NC,L1XHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 200µa. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 12mohm @ 10a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 65w (tc). The product's input capacitance at maximum includes 1100 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. 8-tson advance-wf (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 20a. This product use mosfet (metal oxide) technology. Moreover, it corresponds to xpn12006, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search XPN12006NC,L1XHQ on website for other similar products.
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET20577504 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20577504.
Yes. We ship XPN12006NC,L1XHQ Internationally to many countries around the world.