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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK40J20D,S1F(O. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 44mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4300 pf @ 100 v. The product is available in through hole configuration. The product π-mosviii, is a highly preferred choice for users. The maximum gate charge and given voltages include 100 nc @ 10 v. to-3p(n) is the supplier device package value. In addition, tray is the available packaging type of the product. The continuous current drain at 25°C is 40a (ta). The product carries maximum power dissipation 260w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk40j20, a base product number of the product. The product is designated with the ear99 code number.
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