Central Semiconductor Corp CP802-CWDM3011P-CM

Central Semiconductor Corp

Product Information

FET Feature:
-
HTSUS:
8541.29.0040
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
13mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tray
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 8 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
Die
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CP802
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is CP802-CWDM3011P-CM. It is assigned with possible HTSUS value of 8541.29.0040. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in die. It has a maximum Rds On and voltage of 13mohm @ 1a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tray package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3100 pf @ 8 v. The product is available in surface mount configuration. die is the supplier device package value. The continuous current drain at 25°C is 11a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to cp802, a base product number of the product. The product is designated with the ear99 code number.

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CP802-CWDM3011P(Datasheets)
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RoHS Cert(Environmental Information)

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