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United Kingdom
This is manufactured by Vishay Siliconix. The manufacturer part number is SISS52DN-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 30v 47.1a (ta), 162a (tc) 4.8w (ta), 57w (tc) surface mount powerpak® 1212-8sh. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8sh. Base Part Number: siss52. The maximum gate charge and given voltages include 65nc @ 10v. It has a maximum Rds On and voltage of 1.2mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is +16v, -12v. The product's input capacitance at maximum includes 2950pf @ 15v. The product is available in surface mount configuration. The product trenchfet® gen v, is a highly preferred choice for users. powerpak® 1212-8sh is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 47.1a (ta), 162a (tc). The product carries maximum power dissipation 4.8w (ta), 57w (tc). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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