Toshiba Semiconductor and Storage TPH3R506PL,LQ

TPH3R506PL-LQ Toshiba Semiconductor and Storage TPH3R506PL,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 47A, 10V
title:
TPH3R506PL,LQ
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
52 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4420 pF @ 30 V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Supplier Device Package:
8-SOP Advance (5x5)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
94A (Tc)
Power Dissipation (Max):
830mW (Ta), 116W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPH3R506
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH3R506PL,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 3.5mohm @ 47a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 4420 pf @ 30 v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 55 nc @ 10 v. 8-sop advance (5x5) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 94a (tc). The product carries maximum power dissipation 830mw (ta), 116w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tph3r506, a base product number of the product. The product is designated with the ear99 code number.

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