ON Semiconductor NTLUS4C16NTBG

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
10 Weeks
Detailed Description:
N-Channel 30V 6.1A (Ta) 650mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Base Part Number:
NTLUS4
Gate Charge (Qg) (Max) @ Vgs:
7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
11.4mOhm @ 8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
690pF @ 15V
Mounting Type:
Surface Mount
Series:
µCool™
Supplier Device Package:
6-UDFN (1.6x1.6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.1A (Ta)
Customer Reference:
Power Dissipation (Max):
650mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTLUS4C16NTBG. It has typical 10 weeks of manufacturer standard lead time. It features n-channel 30v 6.1a (ta) 650mw (ta) surface mount 6-udfn (1.6x1.6). The typical Vgs (th) (max) of the product is 1.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-powerufdfn. Base Part Number: ntlus4. The maximum gate charge and given voltages include 7.5nc @ 4.5v. It has a maximum Rds On and voltage of 11.4mohm @ 8a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 690pf @ 15v. The product is available in surface mount configuration. The product µcool™, is a highly preferred choice for users. 6-udfn (1.6x1.6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 6.1a (ta). The product carries maximum power dissipation 650mw (ta). This product use mosfet (metal oxide) technology.

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