Vishay Siliconix SISS30ADN-T1-GE3

SISS30ADN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 80V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Base Part Number:
SISS30
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1295pF @ 40V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8S
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
15.9A (Ta), 54.7A (Tc)
Customer Reference:
Power Dissipation (Max):
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SISS30ADN-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 80v 15.9a (ta), 54.7a (tc) 4.8w (ta), 57w (tc) surface mount powerpak® 1212-8s. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. Base Part Number: siss30. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 8.9mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1295pf @ 40v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8s is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 15.9a (ta), 54.7a (tc). The product carries maximum power dissipation 4.8w (ta), 57w (tc). This product use mosfet (metal oxide) technology.

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FAQs

Yes. You can also search SISS30ADN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET20191430. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISS30ADN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISS30ADN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS30ADN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20191430 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20191430.
Yes. We ship SISS30ADN-T1-GE3 Internationally to many countries around the world.