Toshiba Semiconductor and Storage TJ50S06M3L,LXHQ

TJ50S06M3L-LXHQ Toshiba Semiconductor and Storage TJ50S06M3L,LXHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
13.8mOhm @ 25A, 10V
edacadModel:
TJ50S06M3L,LXHQ Models
Gate Charge (Qg) (Max) @ Vgs:
124 nC @ 10 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12352697
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
+10V, -20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6290 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
DPAK+
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TJ50S06
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ50S06M3L,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 13.8mohm @ 25a, 10v. The maximum gate charge and given voltages include 124 nc @ 10 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 6290 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 50a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj50s06, a base product number of the product. The product is designated with the ear99 code number.

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TJ50S06M3L,LXHQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TJ50S06M3L,LXHQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20114040 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20114040.
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