Toshiba Semiconductor and Storage TK55S10N1,LXHQ

TK55S10N1-LXHQ Toshiba Semiconductor and Storage TK55S10N1,LXHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 27.5A, 10V
edacadModel:
TK55S10N1,LXHQ Models
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/12352700
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3280 pF @ 10 V
standardLeadTime:
74 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
DPAK+
Current - Continuous Drain (Id) @ 25°C:
55A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK55S10
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK55S10N1,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 6.5mohm @ 27.5a, 10v. The maximum gate charge and given voltages include 49 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 157w (tc). The product's input capacitance at maximum includes 3280 pf @ 10 v. It has a long 74 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 55a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk55s10, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET20102243 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20102243.
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