Toshiba Semiconductor and Storage TK200F04N1L,LXGQ

TK200F04N1L-LXGQ Toshiba Semiconductor and Storage TK200F04N1L,LXGQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 100A, 10V
edacadModel:
TK200F04N1L,LXGQ Models
Gate Charge (Qg) (Max) @ Vgs:
214 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12352709
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
14920 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SM(W)
Current - Continuous Drain (Id) @ 25°C:
200A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK200F04
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK200F04N1L,LXGQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 0.9mohm @ 100a, 10v. The maximum gate charge and given voltages include 214 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 375w (tc). The product's input capacitance at maximum includes 14920 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sm(w) is the supplier device package value. The continuous current drain at 25°C is 200a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk200f04, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK200F04N1L,LXGQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK200F04N1L,LXGQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20102242 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20102242.
Yes. We ship TK200F04N1L,LXGQ Internationally to many countries around the world.