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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ8S06M3L,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 104mohm @ 4a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 27w (tc). The product's input capacitance at maximum includes 890 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj8s06, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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