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Toshiba Semiconductor and Storage TJ10S04M3L,LXHQ

TJ10S04M3L-LXHQ Toshiba Semiconductor and Storage TJ10S04M3L,LXHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
44mOhm @ 5A, 10V
edacadModel:
TJ10S04M3L,LXHQ Models
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12352708
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
+10V, -20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
930 pF @ 10 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
DPAK+
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TJ10S04
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ10S04M3L,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 44mohm @ 5a, 10v. The maximum gate charge and given voltages include 19 nc @ 10 v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 27w (tc). The product's input capacitance at maximum includes 930 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. dpak+ is the supplier device package value. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj10s04, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search TJ10S04M3L,LXHQ on website for other similar products.
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You can order Toshiba Semiconductor and Storage brand products with TJ10S04M3L,LXHQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TJ10S04M3L,LXHQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TJ10S04M3L,LXHQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20102238 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20102238.
Yes. We ship TJ10S04M3L,LXHQ Internationally to many countries around the world.
Related Manufacturers: Texas Instruments ROHM Semiconductor Microchip Technology IXYS Taiwan Semiconductor Corporation Toshiba Semiconductor and Storage onsemi Yangjie Technology International Rectifier Harris Corporation
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