Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
60 A
Channel Mode:
Enhancement
Series:
NTB
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.04 O
Package Type:
D2PAK
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 1200V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7
Vgs(th) (Max) @ Id:
4.3V @ 10mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number:
NTBG040
Gate Charge (Qg) (Max) @ Vgs:
106nC @ 20V
Rds On (Max) @ Id, Vgs:
56mOhm @ 35A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
1789pF @ 800V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Customer Reference:
Power Dissipation (Max):
357W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
