Maximum Drain Source Voltage:
150 V
Maximum Continuous Drain Current:
185 A
Channel Mode:
Enhancement
Series:
NTB
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.004 O
Package Type:
D2PAK
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 150V 20A (Ta), 185A (Tc) 3.7W (Ta), 316W (Tc) Surface Mount D²PAK (TO-263)
Vgs(th) (Max) @ Id:
4.5V @ 574µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number:
NTBGS4
Gate Charge (Qg) (Max) @ Vgs:
88.9nC @ 10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 104A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7.285pF @ 75V
Mounting Type:
Surface Mount
Supplier Device Package:
D²PAK (TO-263)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 185A (Tc)
Customer Reference:
Power Dissipation (Max):
3.7W (Ta), 316W (Tc)
Technology:
MOSFET (Metal Oxide)
