Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ

Enrgtech Part No: ET19870721
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Manufacturer Part No:
XPN6R706NC,L1XHQ
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Manufacturer: Toshiba Semiconductor and Storage

XPN6R706NC-L1XHQ Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ

Product Information

FET Feature:

HTSUS:

8541.29.0095

Vgs(th) (Max) @ Id:

2.5V @ 300µA

Operating Temperature:

175°C

Package / Case:

8-PowerVDFN

Rds On (Max) @ Id, Vgs:

6.7mOhm @ 20A, 10V

title:

XPN6R706NC,L1XHQ

edacadModel:

XPN6R706NC,L1XHQ Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

edacadModelUrl:

/en/models/12154997

Drain to Source Voltage (Vdss):

60 V

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XPN6R706NC,L1XHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 300µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 6.7mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 840mw (ta), 100w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 2000 pf @ 10 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 35 nc @ 10 v. 8-tson advance-wf (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 40a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to xpn6r706, a base product number of the product. The product is designated with the ear99 code number.

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