Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XK1R9F10QB,LXGQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 1.92mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 375w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 11500 pf @ 10 v. The product is available in surface mount configuration. The product u-mosx-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 184 nc @ 10 v. to-220sm(w) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 160a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to xk1r9f10, a base product number of the product. The product is designated with the ear99 code number.
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